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Drain source voltage BV DSS (V)(Min.): | 650 |
On-resistance rDS(on)(mΩ)(Typ.): | 170 |
On-resistance rDS(on)(mΩ)(Max.): | 190 |
Max. drain current Id(on)(A): | 20 |
Driving voltage(V): | 10 |
Channel polarity: | N-channel |
Package / Temperature(℃): | TO-220F-3L/-55~125 |
Description: | 650V,190mΩ,20A,N-channel power MOSFET based on Super Junction |
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