CWS60R099BX-Wuhan Xinyuan Semiconductor

PRODUCT CENTER

产品中心

32-bit MCUs Memories Power Transistors

Drain source voltage BV DSS (V)(Min.)：	600
On-resistance rDS(on)(mΩ)(Typ.)：	83
On-resistance rDS(on)(mΩ)(Max.)：	99
Max. drain current Id(on)(A)：	40
Channel polarity：	N-channel
Package / Temperature(℃)：	TO-263-2L(D2PAK)/-55~125
Description：	600V，99mΩ，40A，N-channel power MOSFET based on Super Junction