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Drain source voltage BV DSS (V)(Min.)：

600

On-resistance rDS(on)(mΩ)(Typ.)：

170

On-resistance rDS(on)(mΩ)(Max.)：

190

Max. drain current Id(on)(A)：

20

Driving voltage(V)：

10

Channel polarity：

N-channel

Package / Temperature(℃)：

TO-247-3/-55~125

Description：

600V,190mΩ,20A,N-channel power MOSFET based on Super Junction


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