CWS55R190BX-Wuhan Xinyuan Semiconductor

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32-bit MCUs Memories Power Transistors

Drain source voltage BV DSS (V)(Min.)：	550
On-resistance rDS(on)(mΩ)(Typ.)：	170
On-resistance rDS(on)(mΩ)(Max.)：	190
Max. drain current Id(on)(A)：	20
Channel polarity：	N-channel
Package / Temperature(℃)：	TO-263-2L(D2PAK)/-55~125
Description：	550V,190mΩ,20A,N-channel power MOSFET based on Super Junction