CWS65R190BDR-Wuhan Xinyuan Semiconductor

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32-bit MCUs Memories Power Transistors

Drain source voltage BV DSS (V)(Min.)：	650
On-resistance rDS(on)(mΩ)(Typ.)：	177
On-resistance rDS(on)(mΩ)(Max.)：	190
Max. drain current Id(on)(A)：	20
Channel polarity：	N-channel
Package / Temperature(℃)：	TO-252-2L(DPAK)/-55~125
Description：	650V,190mΩ,20A,N-channel power MOSFET based on Super Junction