CWS5N65ADR-Wuhan Xinyuan Semiconductor

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32-bit MCUs Memories Power Transistors

Drain source voltage BV DSS (V)(Min.)：	650
On-resistance rDS(on)(mΩ)(Typ.)：	700
On-resistance rDS(on)(mΩ)(Max.)：	850
Max. drain current Id(on)(A)：	5
Driving voltage(V)：	10
Channel polarity：	N-channel
Package / Temperature(℃)：	DPAK-3/-55~125
Description：	650V,850mΩ,5A,N-channel power MOSFET based on Super Junction