Drain source voltage BV DSS (V)(Min.):

600

On-resistance rDS(on)(mΩ)(Typ.):

110

On-resistance rDS(on)(mΩ)(Max.):

130

Max. drain current Id(on)(A):

30

Channel polarity:

N-channel

Package / Temperature(℃):

TO-247-3L/-55~125

Description:

600V,130mΩ,30A,N-channel power MOSFET based on Super Junction