Drain source voltage BV DSS (V)(Min.):

650

On-resistance rDS(on)(mΩ)(Typ.):

170

On-resistance rDS(on)(mΩ)(Max.):

190

Max. drain current Id(on)(A):

20

Channel polarity:

N-channel

Package / Temperature(℃):

TO-247-3L/-55~125

Description:

650V,190mΩ,20A,N-channel power MOSFET based on Super Junction