Drain source voltage BV DSS (V)(Min.):

650

On-resistance rDS(on)(mΩ)(Typ.):

480

On-resistance rDS(on)(mΩ)(Max.):

600

Max. drain current Id(on)(A):

7

Channel polarity:

N-channel

Package / Temperature(℃):

TO-251-3L(IPAK)/-55~125

Description:

650V,600mΩ,7A,N-channel power MOSFET based on Super Junction