CWS55R580ADR-Wuhan Xinyuan Semiconductor

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32-bit MCUs Memories Power Transistors

Drain source voltage BV DSS (V)(Min.)：	550
On-resistance rDS(on)(mΩ)(Typ.)：	530
On-resistance rDS(on)(mΩ)(Max.)：	580
Max. drain current Id(on)(A)：	8
Channel polarity ：	N-channel
Package / Temperature(℃)：	TO-252-2L/-55~125
Description：	550V,580mΩ,8A,N-channel power MOSFET based on Super Junction