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Drain source voltage BV DSS (V)(Min.)：

650

On-resistance rDS(on)(mΩ)(Typ.)：

300

On-resistance rDS(on)(mΩ)(Max.)：

360

Max. drain current Id(on)(A)：

11

Channel polarity：

N-channel

Package / Temperature(℃)：

TO-263-2L/-55~125

Description：

650V,360mΩ,11A,N-channel power MOSFET based on Super Junction


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