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Q: What process do we use for our MOSFETs?A: The Super Junction process is utilized. Super junction technology was developed for high-voltage power semiconductor devices equipped with a breakdown voltage of 600V or more to improve the conflict between on-resistance and breakdown voltage. The use of superjunction technology helps to reduce on-resistance and increase MOS tube switching speed, and power MOSFETs based on this technology have become the industry standard in the field of high-voltage switching converters.
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Q: What are the application areas of our MOSFETs?A: Our MOSFETs with super junction technology are used in the following applications: 1) Power supplies for computers and servers - lower power loss; 2) Adapters (laptops, printers, etc.) - lighter and more convenient; 3) Lighting (HID lamps, industrial lighting, road lighting, etc.) - higher power conversion efficiency; 4) Consumer electronics (LCD TVs, plasma TVs, etc.) - lighter, thinner, more energy efficient.
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Q: There are some problems with using MOS in parallel, so what can we do to avoid them?A: First, the consistency of the device must be good. When power MOSFETs are connected in parallel, small differences in the internal parameters of the device can cause an imbalance in the current of each branch of the parallel connection and lead to single-tube overcurrent damage. Next is the power. If the power is higher than 25%, the MOS heats up severely and the performance will drop sharply, so the MOS needs to be derated during design.
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Q: What packages are available for current MOSFETs?A: Packages are available in TO-220, TO-220F, TO-252, and TO-247.
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